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Model NTHD4P02FT1
Description Power MOSFET and Schottky diode
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-8
Delivery time
Packaging method Tape
Standard packaging quantity 1
1.05  yuan 1.05yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6396) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-20.0 V

 

Technical parameters/rated current:

-3.00 A

 

Technical parameters/drain source resistance:

200 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.10 W

 

Technical parameters/Input capacitance:

300 pF

 

Technical parameters/gate charge:

6.00 nC

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

2.20 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-23-8

 

Dimensions/Packaging:

SOT-23-8

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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