Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -4.40 A |
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Technical parameters/drain source resistance: | 77.0 mΩ, 85.0 mΩ |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 1.1W (Ta) |
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Technical parameters/Input capacitance: | 680 pF |
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Technical parameters/gate charge: | 7.40 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 3.20 A |
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Technical parameters/Input capacitance (Ciss): | 680pF @10V(Vds) |
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Technical parameters/dissipated power (Max): | 1.1W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTHD3101FT1G
|
ON Semiconductor | 类似代替 | SMD-8 |
ON SEMICONDUCTOR NTHD3101FT1G 晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V 新
|
||
NTHD3101FT3
|
ON Semiconductor | 完全替代 | SMD-8 |
功率MOSFET和肖特基二极管 Power MOSFET and Schottky Diode
|
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