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Model NTGS4111PT1
Description Power MOSFET (-30 V, -4.7 A, Single P-channel, TSOP-6)
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-6
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2044) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-30.0 V

 

Technical parameters/rated current:

-3.70 A

 

Technical parameters/drain source resistance:

68.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

630mW (Ta)

 

Technical parameters/Input capacitance:

750 pF

 

Technical parameters/gate charge:

32.0 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

3.70 A

 

Technical parameters/Input capacitance (Ciss):

750pF @15V(Vds)

 

Technical parameters/dissipated power (Max):

630mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-23-6

 

Dimensions/Packaging:

SOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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