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Model NTGD3133PT1G
Description 2.5A,-20V,Power MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.03  yuan 2.03yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7093) Minimum order quantity(1)
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Technical parameters/drain source resistance:

145 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.10 W

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Continuous drain current (Ids):

2.2A

 

Technical parameters/Input capacitance (Ciss):

400pF @10V(Vds)

 

Technical parameters/rated power (Max):

560 mW

 

Technical parameters/dissipated power (Max):

560 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTGD3147FT1G NTGD3147FT1G ON Semiconductor 功能相似 SOT-23-6
-2.5A,-20V,P沟道MOSFET及一个20V,1A肖特基二极管
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