Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 60 mΩ |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20 V |
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Technical parameters/rise time: | 7 ns |
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Technical parameters/Input capacitance (Ciss): | 819pF @10V(Vds) |
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Technical parameters/rated power (Max): | 700 mW |
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Technical parameters/descent time: | 7 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 700mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-23-6 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.5 mm |
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Dimensions/Height: | 0.94 mm |
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Dimensions/Packaging: | SOT-23-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3443T1
|
ON Semiconductor | 类似代替 | SOT-23-6 |
-2A,P沟道MOSFET
|
||
NTGS3443T1G
|
ON Semiconductor | 类似代替 | SOT-23-6 |
ON SEMICONDUCTOR NTGS3443T1G 晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
|
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