Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 15 @5mA, 10V |
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Technical parameters/rated power (Max): | 385 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363 |
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Dimensions/Packaging: | SOT-363 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSVMUN5332DW1T1G
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ON Semiconductor | 功能相似 | TSSOP-6 |
互补偏置电阻晶体管R1 = 4.7千欧, R2 = 4.7千? Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
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