Technical parameters/frequency: | 300 MHz |
|
Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 0.3 W |
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Technical parameters/breakdown voltage (collector emitter): | 150 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 60 @10mA, 5V |
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Technical parameters/rated power (Max): | 225 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMMBT5401LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBT 系列 150 V 500 mA 表面贴装 PNP 硅 晶体管 - SOT-23-3
|
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