Technical parameters/rated voltage (DC): | 40.0 V |
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Technical parameters/rated current: | 200 mA |
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Technical parameters/polarity: | NPN+PNP |
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Technical parameters/dissipated power: | 357 mW |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.2A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
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Technical parameters/rated power (Max): | 500 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-563-6 |
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Dimensions/Length: | 1.6 mm |
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Dimensions/Width: | 1.2 mm |
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Dimensions/Height: | 0.55 mm |
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Dimensions/Packaging: | SOT-563-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NST3946DXV6T5G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
互补的通用晶体管 Complementary General Purpose Transistor
|
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