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Model NST3904DXV6T1G
Description ON SEMICONDUCTOR NST3904DXV6T1G Single transistor bipolar, NPN, 40 V, 300 MHz, 357 mW, 200 mA, 30 hFE
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Brand: ON Semiconductor
Packaging SOT-563-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.51  yuan 0.51yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6435) Minimum order quantity(1)
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Technical parameters/frequency:

300 MHz

 

Technical parameters/rated voltage (DC):

40.0 V

 

Technical parameters/rated current:

200 mA

 

Technical parameters/number of pins:

6

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

357 mW

 

Technical parameters/gain bandwidth product:

300 MHz

 

Technical parameters/breakdown voltage (collector emitter):

40 V

 

Technical parameters/Maximum allowable collector current:

0.2A

 

Technical parameters/minimum current amplification factor (hFE):

100 @10mA, 1V

 

Technical parameters/rated power (Max):

500 mW

 

Technical parameters/DC current gain (hFE):

30

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

500 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-563-6

 

Dimensions/Length:

1.6 mm

 

Dimensions/Width:

1.2 mm

 

Dimensions/Height:

0.55 mm

 

Dimensions/Packaging:

SOT-563-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NST3904DXV6T5 NST3904DXV6T5 ON Semiconductor 完全替代 SOT-563-6
双路通用晶体管 Dual General Purpose Transistor
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