Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -100 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 35 @5mA, 10V |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-563 |
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Dimensions/Packaging: | SOT-563 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBA114EDXV6T1G
|
ON Semiconductor | 完全替代 | SOT-563-6 |
双PNP偏置电阻晶体管 Dual PNP Bias Resistor Transistors
|
||
NSBA123JDP6T5G
|
ON Semiconductor | 功能相似 | SOT-963 |
双数字晶体管( BRT ) Dual Digital Transistors (BRT)
|
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