Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -100 mA |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | M-A1 |
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Dimensions/Packaging: | M-A1 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panasonic | 功能相似 | 3 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN
|
||
NR111E
|
Sanken Electric | 功能相似 | SOIC-8 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN
|
||
UN111E
|
Panasonic | 功能相似 |
PNP硅外延平面晶体管 Silicon PNP epitaxial planer transistor
|
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