Technical parameters/rated voltage (DC): | 410 V |
|
Technical parameters/rated current: | 15.0 A |
|
Technical parameters/dissipated power: | 107 W |
|
Technical parameters/rise time: | 4.00 ns |
|
Technical parameters/breakdown voltage (collector emitter): | 440 V |
|
Technical parameters/rated power (Max): | 107 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 107 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.28 mm |
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Dimensions/Width: | 4.82 mm |
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Dimensions/Height: | 9.28 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MGP15N35CL
|
ON Semiconductor | 功能相似 | TO-220 |
点火IGBT 15安培， 350伏特N沟道TO- 220和D2PAK Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK
|
||
MGP20N40CL
|
ON Semiconductor | 功能相似 |
SMARTDISCRETES内部钳位， N沟道IGBT SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
|||
NGP15N41CLG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR NGP15N41CLG 单晶体管, IGBT, 15 A, 440 V, 107 W, 440 V, TO-220, 3 引脚
|
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