Technical parameters/rated voltage (DC): | 400 V |
|
Technical parameters/rated current: | 20 A |
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Technical parameters/dissipated power: | 125 W |
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Technical parameters/breakdown voltage (collector emitter): | 440 V |
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Technical parameters/rated power (Max): | 125 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 125000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NGB8202NT4
|
ON Semiconductor | 类似代替 | TO-263-3 |
点火IGBT Ignition IGBT
|
||
|
|
Freescale | 类似代替 | D2PAK |
点火IGBT Ignition IGBT
|
||
NGB8202NT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
点火IGBT Ignition IGBT
|
||
NGD8201ANT4G
|
Littelfuse | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR NGD8201ANT4G IGBT Single Transistor, 20 A, 125 W, 440 V, TO-252, 3 Pins 新
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