Technical parameters/dissipated power: | 0.2 W |
|
Technical parameters/gain bandwidth product: | 8.5 GHz |
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Technical parameters/breakdown voltage (collector emitter): | 12 V |
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Technical parameters/gain: | 12 dB |
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Technical parameters/minimum current amplification factor (hFE): | 20 @20mA, 8V |
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Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Height: | 1.4 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE97733-T1B-A
|
California Eastern Laboratories | 完全替代 | SOT-23-3 |
Trans RF BJT PNP 12V 0.05A 3Pin SOT-23 T/R
|
||
|
|
Renesas Electronics | 完全替代 | 3 |
Trans RF BJT PNP 12V 0.05A 3Pin SOT-23 T/R
|
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