Technical parameters/dissipated power: | 2.50 W |
|
Technical parameters/Leakage source breakdown voltage: | 9.00 V |
|
Technical parameters/Continuous drain current (Ids): | 350 mA |
|
Encapsulation parameters/installation method: | Screw |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fujitsu | 功能相似 | 3 |
Trans JFET 15V 3Pin Case ME
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||
FLU35XM
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Sumitomo | 功能相似 | CASE XM |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
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