Technical parameters/dissipated power: | 150 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 12 V |
|
Technical parameters/gain: | 13 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @20mA, 10V |
|
Technical parameters/rated power (Max): | 150 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 150 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-343 |
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Dimensions/Height: | 0.9 mm |
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Dimensions/Packaging: | SOT-343 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE85618-T1-A
|
California Eastern Laboratories | 完全替代 | SOT-343 |
Trans RF BJT NPN 12V 0.1A 4Pin(3+Tab) SOT-343 T/R
|
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