Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 10 Ω |
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Technical parameters/dissipated power: | 0.36 W |
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Technical parameters/threshold voltage: | 1.7 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 6.3 ns |
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Technical parameters/Input capacitance (Ciss): | 79pF @25V(Vds) |
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Technical parameters/rated power (Max): | 360 mW |
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Technical parameters/descent time: | 7.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 360 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.92 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.93 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS0610
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR NDS0610 晶体管, MOSFET, P沟道, 120 mA, -60 V, 10 ohm, -10 V, -1.7 V
|
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