Technical parameters/rated voltage (DC): | 30.0 V |
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Technical parameters/rated current: | 8.00 A |
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Technical parameters/drain source resistance: | 28.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3W (Ta) |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | -15.0 A to 15.0 A |
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Technical parameters/Input capacitance (Ciss): | 890pF @15V(Vds) |
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Technical parameters/rated power (Max): | 1.1 W |
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Technical parameters/dissipated power (Max): | 3W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-4 |
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Dimensions/Packaging: | SOT-223-4 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDT453N
|
Fairchild | 类似代替 | SOT-223-4 |
N沟道增强型网络场效晶体管 N-Channel Enhancement Mode Field Effect Transistor
|
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