Technical parameters/power supply current: | 220 µA |
|
Technical parameters/number of circuits: | 2 |
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Technical parameters/gain bandwidth product: | 1.8 MHz |
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Technical parameters/input compensation voltage: | 2 mV |
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Technical parameters/input bias current: | 20 nA |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -40℃ ~ 125℃ |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NCV33172DR2G
|
ON Semiconductor | 完全替代 | SOIC-8 |
MC33171/2/4，MCV33172，低功率，单电源 3 V 至 44 V，运算放大器，ON Semiconductor MC33171（单路），MC33172（双路），MC33174（四路） 低电源电流：每个放大器 180 μA 宽带宽：1.8 MHz 高转换速率：2.1 V/μs 低输入偏置电压：2 mV NCV33172 适用于汽车应用；符合 AEC-Q100 ### 运算放大器，ON Semiconductor
|
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