Technical parameters/power supply current: | 820 µA |
|
Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/dissipated power: | 340 mW |
|
Technical parameters/Common Mode Rejection Ratio: | 60 dB |
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Technical parameters/conversion rate: | 1.20 V/μs |
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Technical parameters/gain bandwidth product: | 900 kHz |
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Technical parameters/input compensation voltage: | 500 µV |
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Technical parameters/input bias current: | 10 pA |
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Technical parameters/operating temperature (Max): | 105 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/gain bandwidth: | 900 kHz |
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Technical parameters/power supply voltage (Max): | 7 V |
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Technical parameters/power supply voltage (Min): | 0.9 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TSOT-23-6 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.5 mm |
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Dimensions/Height: | 0.94 mm |
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Dimensions/Packaging: | TSOT-23-6 |
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Physical parameters/operating temperature: | -40℃ ~ 105℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Signal Conditioning, Sensor Interfaces |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NCS2002SN1T1G
|
ON Semiconductor | 类似代替 | TSOT-23-6 |
单轨对轨运算放大器
|
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