Technical parameters/rise/fall time: | 16ns, 11ns |
|
Technical parameters/halogen-free state: | Halogen Free |
|
Technical parameters/number of output interfaces: | 2 |
|
Technical parameters/output voltage: | 35 V |
|
Technical parameters/rise time: | 16 ns |
|
Technical parameters/rise time (Max): | 16 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/power supply voltage: | 10V ~ 13.2V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Width: | 4 mm |
|
Dimensions/Height: | 1.5 mm |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | 0℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2101STRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
||
IR2101STRPBF
|
IFA | 功能相似 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
|||
IR2101STRPBF
|
IFC | 功能相似 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
|||
NCP5359DR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
MOSFET驱动器
|
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