Technical parameters/halogen-free state: | Halogen Free |
|
Technical parameters/number of circuits: | 1 |
|
Technical parameters/dissipated power: | 725 mW |
|
Technical parameters/input current (Min): | 10 μA |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 725 mW |
|
Technical parameters/power supply voltage: | 3V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 3 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
|
Other/Manufacturing Applications: | Cellular Base Stations, Network Switches and Routers, Backplane or Cabled Multipoint Data and Clock Transmission, Central Office Switches, Low-Power High-Speed Short-Reach Alternative to TIA/EIA-485 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NB3N200SDR2G
|
ON Semiconductor | 完全替代 | SOIC-8 |
M-LVDS 驱动器 接收器
|
||
NBA3N200SDG
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON SEMICONDUCTOR NBA3N200SDG 驱动器, LVDS, 汽车, 差分线路驱动器/接收器, 160 ps, 24 mA, -40 °C, 125 °C, 3 V
|
||
NBA3N200SDR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
时钟驱动器及分配 MLVDS DRIVER RECEIVE
|
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