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Model NAND256W3A2BZA6E
Description 128Mega, 256 Mega, 512 Mega, 1 Gigabit (X8/X16), 528 bytes/word, 264 pages, 1.8V/3V, NAND flash 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Product QR code
Brand: ST Microelectronics
Packaging VFBGA-55
Delivery time
Packaging method Tray
Standard packaging quantity 1
72.08  yuan 72.08yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7406) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

3.30 V, 3.60 V (max)

 

Technical parameters/memory capacity:

256000000 B

 

Technical parameters/operating temperature (Max):

85 ℃

 

Technical parameters/operating temperature (Min):

40 ℃

 

Technical parameters/power supply voltage (Max):

3.6 V

 

Technical parameters/power supply voltage (Min):

2.7 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

VFBGA-55

 

Dimensions/Packaging:

VFBGA-55

 

Physical parameters/operating temperature:

40℃ ~ 85℃

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND256W3A2BN6F NAND256W3A2BN6F Micron 功能相似 TSOP
SLC NAND Flash Parallel 3V/3.3V 256Mbit 32M x 8Bit 12us 48Pin TSOP T/R
NAND256W3A2BZA6E NAND256W3A2BZA6E ST Microelectronics 功能相似 VFBGA-55
SLC NAND Flash Parallel 3V/3.3V 256Mbit 32M x 8Bit 12us 55Pin VFBGA Tray
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