Technical parameters/dissipated power: | 150 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 1000 @6A, 3V |
|
Technical parameters/rated power (Max): | 150 W |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: |
| |
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6050
|
ETC | 功能相似 |
TO-3 PNP 60V 12A
|
|||
2N6050
|
Mospec | 功能相似 | TO-204 |
TO-3 PNP 60V 12A
|
||
2N6051
|
Multicomp | 完全替代 | TO-3 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
|
|
Central Semiconductor | 完全替代 | TO-3 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
|
|
ETC | 完全替代 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
|||
2N6051
|
Microchip | 完全替代 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
|||
2N6052G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N6052G 单晶体管 双极, PNP, -100 V, 150 W, -12 A, 100 hFE 新
|
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