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Model 2N6111

Description STMICROELECTRONICS 2N6111 Single transistor bipolar, universal, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE

Brand: ST Microelectronics

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/frequency:	4 MHz
Technical parameters/rated voltage (DC):	-40.0 V
Technical parameters/rated current:	-7.00 A
Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP, P-Channel
Technical parameters/dissipated power:	40 W
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/minimum current amplification factor (hFE):	30 @3A, 4V
Technical parameters/maximum current amplification factor (hFE):	150
Technical parameters/rated power (Max):	40 W
Technical parameters/DC current gain (hFE):	30
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	40000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Packaging:	TO-220-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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