Technical parameters/dissipated power: | 2 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 70 @2.5A, 5V |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-59 |
|
Dimensions/Packaging: | TO-59 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5004
|
Solid State Devices | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
JANTXV2N5004
|
Semicoa Semiconductor | 完全替代 | TO-59 |
TO-59 NPN 80V 10A
|
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