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Model FDN306P
Description FAIRCHILD SEMICONDUCTOR FDN306P Transistor, MOSFET, P-channel, -2.6 A, -12 V, 40 Mohm, -4.5 V, -600 mV
Product QR code
Brand: Fairchild
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4235) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-12.0 V

 

Technical parameters/rated current:

-2.60 A

 

Technical parameters/rated power:

500 mW

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.03 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/Input capacitance:

454 pF

 

Technical parameters/gate charge:

12.0 nC

 

Technical parameters/drain source voltage (Vds):

12 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

2.60 A

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

1138pF @6V(Vds)

 

Technical parameters/rated power (Max):

460 mW

 

Technical parameters/descent time:

35 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

0.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

2.92 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

0.94 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

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Alternative material

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