Technical parameters/breakdown voltage (collector emitter): | 20 V |
|
Technical parameters/gain: | 7.4 dB |
|
Technical parameters/rated power (Max): | 690 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-439 |
|
Dimensions/Packaging: | SOT-439 |
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Physical parameters/operating temperature: | 200℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MX0912B251Y
|
NXP | 功能相似 | SOT439A |
NPN微波功率晶体管 NPN microwave power transistor
|
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