Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/capacitance: | 29.0 pF |
|
Technical parameters/breakdown voltage: | 30.0 V |
|
Technical parameters/dissipated power: | 200 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-2 |
|
Dimensions/Packaging: | TO-226-2 |
|
Physical parameters/operating temperature: | 125℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MV209
|
Motorola | 功能相似 | TO-92 |
Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, Hyperabrupt, TO-92, TO-226AC, 3Pin
|
||
MV209
|
ON Semiconductor | 功能相似 | TO-226-2 |
Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, Hyperabrupt, TO-92, TO-226AC, 3Pin
|
||
MV209G
|
ON Semiconductor | 功能相似 | TO-226-2 |
硅Epicap二极管 Silicon Epicap Diodes
|
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