Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -100 mA |
|
Technical parameters/halogen-free state: | Halogen Free |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 0.31 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
|
Technical parameters/rated power (Max): | 202 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 310 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SC-70-3 |
|
Dimensions/Packaging: | SC-70-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5137T1
|
ON Semiconductor | 完全替代 | SC-70-3 |
偏置电阻晶体管 Bias Resistor Transistor
|
||
RN2309(TE85L,F)
|
Toshiba | 功能相似 | SOT-323 |
USM PNP 50V 100mA
|
||
UNR9210
|
Panasonic | 功能相似 |
Silicon NPN epitaxial planer transistor with biult-in resistor
|
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