Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 310 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
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Technical parameters/rated power (Max): | 202 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 310 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SC-70-3 |
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Dimensions/Height: | 0.85 mm |
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Dimensions/Packaging: | SC-70-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5213T1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
ON SEMICONDUCTOR MUN5213T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SC-70
|
||
MUN5214T1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
ON SEMICONDUCTOR MUN5214T1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-70 新
|
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