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Model MUN5215T1
Description MUN5215T1 Bandstop NPN transistor 50V 100mA/0.1A 10k gain 160-350 SOT-323/SC-70 marking/marking 8E
Product QR code
Brand: ON Semiconductor
Packaging SC-70-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.29  yuan 0.29yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6313) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

50.0 V

 

Technical parameters/rated current:

100 mA

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

310 mW

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

100mA

 

Technical parameters/minimum current amplification factor (hFE):

160 @5mA, 10V

 

Technical parameters/rated power (Max):

202 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

310 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SC-70-3

 

Dimensions/Height:

0.85 mm

 

Dimensions/Packaging:

SC-70-3

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MUN5215DW1T1G MUN5215DW1T1G ON Semiconductor 功能相似 SC-70-6
ON SEMICONDUCTOR MUN5215DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, SOT-363
PDF
MUN5215T1G MUN5215T1G ON Semiconductor 类似代替 SC-70-3
ON SEMICONDUCTOR MUN5215T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, SOT-323
PDF
PDTC114EU,135 PDTC114EU,135 Nexperia 功能相似 SOT-323-3
TRANS PREBIAS NPN 200mW SOT323
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TRANS PREBIAS NPN 200mW SOT323
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