Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -100 mA |
|
Technical parameters/halogen-free state: | Halogen Free |
|
Technical parameters/polarity: | PNP, P-Channel |
|
Technical parameters/dissipated power: | 0.385 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 385 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-88-6 |
|
Dimensions/Packaging: | SC-88-6 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5134DW1T1G
|
ON Semiconductor | 类似代替 | TSSOP-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review