Technical parameters/rated voltage (DC): | -50.0 V |
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Technical parameters/rated current: | -100 mA |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 0.3 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 80 |
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Technical parameters/rated power (Max): | 202 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Length: | 2.1 mm |
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Dimensions/Width: | 1.24 mm |
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Dimensions/Height: | 0.85 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5133T1
|
ON Semiconductor | 完全替代 | SOT-323 |
偏置电阻晶体管 Bias Resistor Transistor
|
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