Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 230 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 160 |
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Technical parameters/maximum current amplification factor (hFE): | 160 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SC-59-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.5 mm |
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Dimensions/Height: | 1.09 mm |
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Dimensions/Packaging: | SC-59-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Leshan Radio | 完全替代 |
MUN2213T1 带阻NPN三极管 50V 100mA/0.1A 47k 47k 增益80-140 SOT-23/SC-59 marking/标记 8C ESD保护
|
|||
MUN2213T1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MUN2213T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SC-59
|
||
MUN2214T3G
|
ON Semiconductor | 类似代替 | SC-59-3 |
偏置电阻晶体管 Bias Resistor Transistors
|
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