Technical parameters/dissipated power: | 112W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 150 V |
|
Technical parameters/rise time: | 77 ns |
|
Technical parameters/Input capacitance (Ciss): | 1627pF @25V(Vds) |
|
Technical parameters/descent time: | 49 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 112W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-220 |
TO-220 N-CH 60V 20A
|
||
PHP20N06T
|
NXP | 功能相似 | SOT-78 |
N沟道晶体管的TrenchMOS N-channel TrenchMOS transistor
|
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