Chip AI consultant
Technical parameters/drain source voltage (Vds): | 100 V |
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Encapsulation parameters/Encapsulation: | SOP-8 |
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Dimensions/Packaging: | SOP-8 |
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Other/Product Catalog: | MOS(Field Effect Transistor |
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Other/leakage source voltage (Vdss): | 100V |
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Other/continuous drain current (Id) (at 25 ° C): | 6.2A |
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Other/Gate Source Threshold Voltage: | 2.5V @ 250uA |
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Other/leakage source conduction resistance: | 30mΩ @ 10A,10V |
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Other/maximum power dissipation (Ta=25 ° C): | 3.1W |
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Other/Type: | Nchannel |
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Other/Product Code: | C373438 |
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Other/Packaging Specifications: | SOP-8 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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