Technical parameters/frequency: | 200 MHz |
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Technical parameters/rated voltage (DC): | -100 V |
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Technical parameters/rated current: | -1.00 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 250 @500mA, 10V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/DC current gain (hFE): | 300 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, computer and computer peripherals, military and aviation, national defense, motor drive and control, power management, automotive applications |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standards/military grade: | Yes |
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Compli Alternative material
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