Technical parameters/rated voltage (DC): | 5.00 V |
|
Technical parameters/operating voltage: | 5 V |
|
Technical parameters/rated power: | 200 W |
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Technical parameters/breakdown voltage: | 6.4 V |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/clamp voltage: | 9.2 V |
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Technical parameters/peak pulse power: | 1000 W |
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Technical parameters/minimum reverse breakdown voltage: | 6.4 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-216AA-2 |
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Dimensions/Length: | 2.18 mm |
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Dimensions/Width: | 2.05 mm |
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Dimensions/Height: | 1.15 mm |
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Dimensions/Packaging: | DO-216AA-2 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | General |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR 1PMT5.0AT1G. 二极管, TVS, 200W, 5V, DO-216AA, 整卷
|
|||
1PMT5.0AT1G
|
ON Semiconductor | 功能相似 | DO-216AA |
ON SEMICONDUCTOR 1PMT5.0AT1G. 二极管, TVS, 200W, 5V, DO-216AA, 整卷
|
||
1PMT5.0AT3G
|
ON Semiconductor | 类似代替 | DO-216AA |
1PMT 系列 7 V 200 W 齐纳瞬态电压抑制二极管 POWERMITE
|
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