Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
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Technical parameters/power supply current: | 135 mA |
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Technical parameters/clock frequency: | 133MHz (max) |
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Technical parameters/access time: | 133 µs |
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Technical parameters/memory capacity: | 256000000 B |
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Technical parameters/power supply voltage: | 3V ~ 3.6V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 54 |
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Encapsulation parameters/Encapsulation: | VFBGA-54 |
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Dimensions/Packaging: | VFBGA-54 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IS42S16160D-6BLI
|
Integrated Silicon Solution | 功能相似 | TFBGA-54 |
256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 Ball BGA (8mmx13mm) RoHS, IT
|
||
IS42S16160D-7BLI
|
Integrated Silicon Solution | 功能相似 | TFBGA-54 |
RAM， ISSI **ISSI** **SDR SDRAM** 系列提供同步接口，具有可编程 CAS 等待时间（2/3 时钟）。 可使用管道流程实现高速数据传输，且同步 DRAM SDR 系列可提供脉冲读/写功能，且脉冲读/单写入使其特别适用于计算机应用。 **ISSI** SDR SDRAM 设备提供不同的组织和存储器大小系列，工作电源为 3.3V。 LVTTL 接口 有关输入/输出信号，请参考时钟输入的上升边缘 可编程脉冲序列：连续/交错；可编程脉冲长度 每个时钟周期的随机列地址 自刷新和自动刷新模式 ### 动态 RAM
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