Technical parameters/clamp voltage: | 11.5 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 3.3V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/maximum reverse breakdown voltage: | 4.1 V |
|
Technical parameters/peak pulse power: | 150 W |
|
Technical parameters/breakdown voltage: | 4.1 V |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | Micro SMP |
|
Dimensions/Length: | 2.3 mm |
|
Dimensions/Packaging: | Micro SMP |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Minimum Packaging: | 4500 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSP3V3-E3/89A
|
Vishay Semiconductor | 类似代替 | MicroSMP |
ESD Suppressors / TVS Diodes 100W 3.3V Unidirect
|
||
|
|
VISHAY | 类似代替 | Micro |
ESD Suppressors / TVS Diodes 100W 3.3V Unidirect
|
||
MSP3V3-M3/89A
|
Vishay Intertechnology | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
MSP3V3-M3/89A
|
Vishay Semiconductor | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
MSP3V3-M3/89A
|
VISHAY | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
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