Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.2 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @150mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 240 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SC-59-3 |
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Dimensions/Packaging: | SC-59-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Other/Minimum Packaging: | 3000 |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSD602-RT1G
|
ON Semiconductor | 类似代替 | SC-59-3 |
NPN通用放大器晶体管表面贴装 NPN General Purpose Amplifier Transistor Surface Mount
|
||
MSD602-RT2
|
ON Semiconductor | 类似代替 | SC-59 |
SC-59 NPN 50V 0.5A
|
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