Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -500 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 200 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @150mA, 10V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.5 mm |
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Dimensions/Height: | 1.09 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC808-16
|
NXP | 功能相似 | SOT-23 |
Trans GP BJT PNP 25V 0.8A Automotive 3Pin SOT-23 T/R
|
||
MMBTA55-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
三极管(BJT) MMBTA55-7-F SOT-23
|
||
MMBTA55LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA55LT1G 单晶体管 双极, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE
|
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