Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 55 V |
|
Technical parameters/Maximum allowable collector current: | 0.005A |
|
Other/Product Lifecycle: | Unknown |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 |
RF Power Bipolar Transistor, 1Element, S Band, Silicon, NPN, 0.4INCH, FM-2
|
|||
|
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, S Band, Silicon, NPN, 0.4INCH, FM-2
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review