Technical parameters/rated voltage (DC): | 12.0 V |
|
Technical parameters/rated current: | 180 mA |
|
Technical parameters/drain source voltage (Vds): | 12.0 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | PLD-1 |
|
Dimensions/Packaging: | PLD-1 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TDK-EPC | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
KEMET Corporation | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
National Semiconductor | 功能相似 | HSSOP |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
||
MRFG35010
|
Freescale | 功能相似 | NI-360HF |
FET RF 15V 3.55GHz NI360HF
|
||
MRFG35010
|
FSL | 功能相似 |
FET RF 15V 3.55GHz NI360HF
|
|||
MRFG35010ANT1
|
Freescale | 类似代替 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
||
MRFG35010ANT1
|
Freescale | 类似代替 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
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