Technical parameters/frequency: | 3.55 GHz |
|
Technical parameters/output power: | 9 W |
|
Technical parameters/gain: | 10 dB |
|
Technical parameters/test current: | 180 mA |
|
Technical parameters/rated voltage: | 15 V |
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Encapsulation parameters/Encapsulation: | PLD-1 |
|
Dimensions/Packaging: | PLD-1 |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TDK-EPC | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
KEMET Corporation | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
National Semiconductor | 功能相似 | HSSOP |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
||
MRFG35010
|
Freescale | 功能相似 | NI-360HF |
FET RF 15V 3.55GHz NI360HF
|
||
MRFG35010
|
FSL | 功能相似 |
FET RF 15V 3.55GHz NI360HF
|
|||
MRFG35010ANT1
|
Freescale | 类似代替 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
||
MRFG35010ANT1
|
Freescale | 类似代替 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
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