Technical parameters/dissipated power: | 2000 mW |
|
Technical parameters/output power: | 0.5 W |
|
Technical parameters/breakdown voltage (collector emitter): | 16 V |
|
Technical parameters/gain: | 9.5 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @50mA, 10V |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | Macro-X |
|
Dimensions/Height: | 2.54 mm |
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Dimensions/Packaging: | Macro-X |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFG35,115
|
NXP | 功能相似 | TO-261-4 |
NXP BFG35,115 晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE
|
||
NTE278
|
NTE Electronics | 功能相似 | TO-39 |
NTE ELECTRONICS NTE278. 射频晶体管, NPN, 20V, 1.2GHZ
|
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