Technical parameters/rated voltage (DC): | -80.0 V |
|
Technical parameters/rated current: | -1.00 A |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 50 @250mA, 1V |
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Technical parameters/rated power (Max): | 1 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC307B
|
Continental Device | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC307B
|
Fairchild | 功能相似 | TO-226-3 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
|
BC307B
|
DC Components | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC307B
|
Rochester | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
KST56MTF
|
Fairchild | 功能相似 | SOT-23-3 |
PNP外延硅晶体管驱动晶体管补充型KST06
|
||
MPSW56RLRAG
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管，最大 1A，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
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