Technical parameters/breakdown voltage (collector emitter): | 20 V |
|
Technical parameters/minimum current amplification factor (hFE): | 60 @5mA, 10V |
|
Technical parameters/rated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micross | 类似代替 |
PNP晶体管RF PNP RF Transistor
|
|||
MPSH81
|
Central Semiconductor | 类似代替 | TO-226-3 |
PNP晶体管RF PNP RF Transistor
|
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