Technical parameters/rated voltage (DC): | -300 V |
|
Technical parameters/rated current: | -500 mA |
|
Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 25 @30mA, 10V |
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Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-92-3 |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-92-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA92RL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
高电压晶体管 High Voltage Transistors
|
||
MPSA92RLRPG
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR MPSA92RLRPG 单晶体管 双极, PNP, 300 V, 50 MHz, 625 mW, 500 mA, 40 hFE
|
||
MPSA92ZL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR MPSA92ZL1G 双极性晶体管, PNP, 300V V(BR)CEO, 500mA I(C), TO-92
|
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